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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors S2000AFI *Wit www..com DESCRIPTION h TO-3P(H)IS package *High voltage *Fast switching APPLICATIONS *Horizontal deflection for color TV PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol ABSOLUTE MAXIMUM RATINGS (TC=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1500 700 10 8 15 50 150 -55~150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 2.5 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=100mA ;IB=0 IE=10mA ;IC=0 IC=4.5A ;IB=2.0A IC=4.5A ;IB=2.0A VCE=1500V; VBE=0 TC=125 VEB=5V; IC=0 IC=1A ; VCE=5V IC=0.1A ; VCE=5V;f=5MHz 8 MIN 700 10 www..com S2000AFI SYMBOL VCEO(SUS) V(BR)EBO VCE(sat) VBE(sat) ICES IEBO hFE fT TYP. MAX UNIT V V 1.0 1.3 1.0 2.0 0.1 V V mA mA 7 MHz Switching times inductive load ts tf Storage time IC=4.5A ; hFE=2.5; VCC=140V LC=0.9mH; LB=3H Fall time 0.55 s 7 s 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www..com S2000AFI Fig.2 Outline dimensions (unindicated tolerance:0.15 mm) 3 |
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